| PART |
Description |
Maker |
| AT28BV16-25SC AT28BV16-25SI AT28BV16-25TC AT28BV16 |
16K 2K x 8 Battery-Voltage CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 2K X 8 EEPROM 3V, 300 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
Atmel Corp.
|
| AT28BV64B09 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| PEB2465H |
Voice Access - SICOFI4 (IOM) Single Chip CMO
|
Infineon
|
| AT27BV512-12JC AT27BV512-12JI AT27BV512-12RC AT27B |
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SOIC -55 to 125 64K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-PDIP -55 to 125 64K X 8 OTPROM, 150 ns, PDSO28
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT28LV64B DOC233 AT28LV64B-20JC AT28LV64B-20TC AT2 |
64K (8K x 8) Low Voltage CMOS
From old datasheet system
64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
|
ATMEL[ATMEL Corporation]
|
| AT28C16-15 AT28C16-15SI AT28C16E-15SI AT28C16 AT28 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 2K X 8 EEPROM 5V, 150 ns, PDSO24
16K (2K x 8) Parallel EEPROMs
16K 2K x 8 CMOS E2PROM
|
Atmel, Corp.
ATMEL[ATMEL Corporation]
|
| AT27LV512A07 AT27LV512A-55RU AT27LV512A-90JI AT27L |
90NS, SOIC, IND TEMP, GREEN(EPROM) 64K X 8 OTPROM, 55 ns, PDSO28
512K (64K x 8) Low Voltage OTP EPROM
|
Atmel, Corp.
ATMEL Corporation
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| P4C187-20PC P4C187-20PI P4C187-20PM P4C187-20PMB P |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS
64K X 1 STANDARD SRAM, 35 ns, QCC28
64K X 1 STANDARD SRAM, 35 ns, CDIP22
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
|
| IDT71V016 IDT71V016SA IDT71V016SA10BF8 IDT71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PBGA48
High-Performance Current-Mode PWM Controller 14-SOIC -40 to 85 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K X 16 STANDARD SRAM, 12 ns, PDSO44 0.400 INCH, PLASTIC, SOJ-44
TOOLS,SCREWDRIVERS,TORX,BALLDRIVER T-HANDLE SET,10-PC.INCH SIZES 3/32-3/8" AND STAND,HAND TOOLS,BALLDRIVER® T-HANDLE SETS ,BONDHUS
3.3V 64K x 16 Static RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| AT29BV010A |
128K x 8 Single 2.7-volt Battery-Voltage Flash Memory(128K x 8单电.7V Battery-Voltage技术闪速存储器) 128K的8.7伏电池电压快闪记忆体28K的8单电源为2.7V电池电压技术闪速存储器
|
Atmel, Corp.
|
